(Singapore)
Product Summary
The BU808DFI is an NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.
Parametrics
BU808DFI absolute maximum ratings: (1)VCBO Collector-Base Voltage (IE = 0): 1400 V; (2)VCEO Collector-Emit ter Voltage (IB = 0): 700 V; (3)VEBO Emitter-Base Voltage (IC = 0): 5 V; (4)IC Collector Current: 8 A; (5)ICM Collector Peak Current (tp < 5 ms): 10 A; (6)IB Base Current: 3 A; (7)IBM Base Peak Current (tp < 5 ms): 6 A; (8)Ptot Total Dissipation at Tc = 25 ℃: 52 W; (9)Tstg Storage Temperature: -65 to 150 ℃; (10)Tj Max. Operating Junction Temperature: 150 ℃.
Features
BU808DFI features: (1)STMicroelectronics preferred salestype; (2)NPN monolithic Darlington with integrated free-wheeling diode; (3)high voltage capability (＞1400V ); (4) High DC current gain (TYP. 150); (5) U.L.recognised ISOWATT218 package; (6)(U.L.FILE#E81734(N)); (7)low base-drive requirements; (8)dedicated application note AN1184.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BU808DFI |
STMicroelectronics |
Transistors Darlington NPN Sw Darlington |
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
BU806 |
Fairchild Semiconductor |
Transistors Darlington NPN Epitaxial Sil Darl |
Data Sheet |
Negotiable |
|
||||
|
BU807 |
Fairchild Semiconductor |
Transistors Darlington NPN Epitaxial Sil Darl |
Data Sheet |
Negotiable |
|
||||
 |
BU807FI |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
BU807TU |
Fairchild Semiconductor |
Transistors Darlington NPN Epitaxial Sil Darl |
Data Sheet |
Negotiable |
|
||||
|
BU808 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
BU808-3PN |
Other |
|
Data Sheet |
Negotiable |
|
||||
