(Singapore)
Product Summary
The 2SA1209 is a PNP/NPN Epitaxial Planar Silicon Transistor.
Parametrics
2SA1209 absolute maximum ratings: (1)Collector-to-Base Voltage VCBO: -180V; (2)Collector-to-Emitter Voltage VCEO: -160V; (3)Emitter-to-Base Voltage VEBO: -5V; (4)Collector Current IC: -140mA; (5)Collector Current (Pulse) ICP: -200mA; (6)Collector Dissipation PC: 1W; (7)Collector Dissipation @ TC=25℃: 10W; (8)Junction Temperature Tj: 150℃; (9)Storage Temperature Tstg:–55℃ to +150℃.
Features
2SA1209 features: (1) Adoption of FBET process; (2) High breakdown voltage; (3) Good linearity of hFE and small Cob; (4) Fast switching speed.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 2SA1209 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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2SA1006 |
Other |
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Data Sheet |
Negotiable |
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2SA1006A |
Other |
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Data Sheet |
Negotiable |
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2SA1006B |
Other |
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Data Sheet |
Negotiable |
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2SA1008 |
Other |
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Data Sheet |
Negotiable |
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2SA1009 |
Other |
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Data Sheet |
Negotiable |
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2SA1009A |
Other |
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Data Sheet |
Negotiable |
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