(Singapore)
Product Summary
The 2SA979 is a dual transistor.
Parametrics
2SA979 absolute maximum ratings: (1)VCBO: -100V; (2)VEBO: -5V; (3)VCEO: -100V; (4)IC: -50mA; (5)PC: 200mW/Unit; (6)PT @ TA=25℃: 450mW; (7)Tj: 125℃; (8)Tstg: -55℃ to +125℃.
Features
2SA979 features: (1) VCEO= -100V; (2) NF= 0.5dB; (3) NV= 100mV; (4) hFE1/hFE2=0.98; (5) |VBE1-VBE2| =1mV; (6) hFE= 250 to 1200.
Diagrams
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 2SA933ASTPR |
ROHM Semiconductor |
Transistors Bipolar (BJT) PNP 50V 0.15A |
Data Sheet |
Negotiable |
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2SA965-Y(TE6,F,M) |
Toshiba |
Transistors Bipolar (BJT) Transistor PNP, 120V, 0.8A |
Data Sheet |
Negotiable |
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2SA933ASTPQ |
ROHM Semiconductor |
Transistors Bipolar (BJT) PNP 50V 0.15A |
Data Sheet |
Negotiable |
|
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 |
2SA933ASTPS |
ROHM Semiconductor |
Transistors Bipolar (BJT) PNP 50V 0.15A |
Data Sheet |
Negotiable |
|
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 |
2SA900 |
Other |
|
Data Sheet |
Negotiable |
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2SA985A |
Other |
|
Data Sheet |
Negotiable |
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