(Singapore)
Product Summary
The MI4606 is a miniature surface MOSFET. It uses advanced Trench process, low RDS (ON) assures minimal power loss and energy conversion, which makes this device ideal for use in power management circuit. The applications of the MI4606 include load switch, DC-DC converters, power management.
Parametrics
MI4606 absolute maximum ratings: (1)Drain-Source Voltage: 30V in N-channel, -30V in P-channel; (2)Gate-Source Voltage: ±20V; (3)Continuous Drain Current @ TA=25℃: 6.9A in N-channel, -6A in P-channel; (4)Continuous Drain Current @ TA=70℃: 5.6A in N-channel, -4.8A in P-channel; (5)Pulsed Drain Current: 28A in N-channel, -24A in P-channel; (6)Power Dissipation @ TA=25℃: 2W; (7)Power Dissipation @ TA=70℃: 1.44W; (8)Junction and Storage Temperature Range: -55℃ to +150℃.
Features
MI4606 features: (1)(N-channel) VDS (V)=30V; (2)ID (A)=6.9A (VGS=10V); (3)RDS (ON)=28mΩ @VGS=10V; (4)RDS (ON)=42mΩ @VGS=4.5V; (5)(P-channel) VDS (V)= -30V; (6)ID (A)=6.0A (VGS=10V); (7)RDS (ON)=35mΩ @VGS= -10V; (8)RDS (ON)=58mΩ @VGS= -4.5V; (9)Low gate charge; (10)fast switching speed; (11)High performance trench technology for extremely low RDS (ON); (12)High power and current handling capability.
Diagrams
