(Singapore)
Product Summary
The 2N5955 is a Silicon PNP Power Transistor. The applications of the 2N5955 include Designed for driver circuits, switching and amplifier applications.
Parametrics
2N5955 absolute maximum ratings: (1)VCBO Collector-base voltage: 70V; (2)VCEO Collector-emitter voltage: 60V; (3)VEBO Emitter-base voltage Open collector: 5V; (4)IC Collector current: 6A; (5)IB Base current: 2A; (6)PD Total Power Dissipation TC=25℃: 40W; (7)Tj Junction temperature: 150℃; (8)Tstg Storage temperature: -65℃ to 200℃.
Features
2N5955 features: (1) With TO-66 package; (2) Low collector-emitter saturation voltage; (3) Excellent safe operating area; (4) Complement to type 2N6372 2N6373 2N6374.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 2N5955 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||
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Vishay/Siliconix |
JFET 25V 1pA |
Data Sheet |
Negotiable |
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JFET 25V 1pA |
Data Sheet |
Negotiable |
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Vishay/Siliconix |
JFET 25V 1pA |
Data Sheet |
Negotiable |
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|
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Vishay/Siliconix |
JFET 25V 1pA |
Data Sheet |
Negotiable |
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Other |
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Data Sheet |
Negotiable |
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Data Sheet |
Negotiable |
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