(Singapore)
Product Summary
The 2SC2909 is a PNP/NPN Epitaxial Planar Silicon Transistor.
Parametrics
2SC2909 absolute maximum ratings: (1)Collector-to-Base Voltage VCBO: -180V; (2)Collector-to-Emitter Voltage VCEO: -160V; (3)Emitter-to-Base Voltage VEBO: -5V; (4)Collector Current IC: -70mA; (5)Collector Current (Pulse) ICP: -140mA; (6)Collector Dissipation PC: 600mW; (7)Junction Temperature Tj: 150℃; (8)Storage Temperature Tstg:-55℃ to +150℃.
Features
2SC2909 features: (1) High breakdown voltage; (2) Adoption of FBET process; (3) Excellent linearity of hFE and small cob; (4) Fast switching speed.
Diagrams
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 2SC2909 |
Other |
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Data Sheet |
Negotiable |
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2SC2000 |
Other |
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Data Sheet |
Negotiable |
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2SC2001 |
Other |
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Negotiable |
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2SC2002 |
Other |
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Negotiable |
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2SC2003 |
Other |
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Negotiable |
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2SC2020 |
Other |
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Data Sheet |
Negotiable |
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2SC2021 |
Other |
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Data Sheet |
Negotiable |
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