Product Summary

The TC58FVT800FT-12 is an 8388608-bit, 3.0V read-only electrically erasable and programmable flash memory organized as 1048576 words ×8 bits or as 524288 words ×16 bits. The TC58FVT800FT-12 features commands for read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically excuted in the chip. The TC58FVT800FT-12 has chip, block and Multi-Block Erase capability.

Parametrics

TC58FVT800FT-12 absolute maximum ratings: (1)VDD Supply Voltage: -0.6V to 4.6V; (2)Input Voltage: -0.6V to VDD+0.5V (≤4.6V); (3)Input/Output Voltage: -0.6V to VDD+0.5 (≤4.6V); (4)Power Dissipation: 0.6W; (5)Soldering Temperature(10s): 260℃; (6)Storage Temperature: -55℃ to 150℃; (7)Operating Temperature: -40℃ to 85℃; (8)Erase/Program Cycling Capability: 100000Cycles; (9) Maximum Input Voltage: 13.0V; (10) Output Short Circuit Current: 100mA.

Features

TC58FVT800FT-12 features: (1)power Supply VDD=2.7V to 3.6V; (2)Organization 1M×8 bits/512K ×16bits; (3)Auto Program, Auto chip Erase; (4)Auto Block Erase, Auto Multiple Block Erase; (5)Erase Suspend/ Resume, Block Protection; (6)Compatible with JEDEC standard commands; (7)Access Time: 80ns (VDD=3.0V to 3.6V); (8)Access Time: 100ns/120ns (VDD=2.7V to 3.0V).

Diagrams

TC58FVT800FT-12 block diagram

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