(Singapore)
Product Summary
The FQPF8N80C is an 800V N-Channel MOSFET. It is produced using Fairchild’s proprietary, planar stripe, DMOS technology. The FQPF8N80C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF8N80C is well suited for high efficiency switch mode power supplies.
Parametrics
FQPF8N80C absolute maximum ratings: (1)VDSS Drain-Source Voltage: 800V; (2)ID Drain Current - Continuous (TC = 25℃): 8A; (3)Continuous (TC = 100℃): 5.1A; (4)IDM Drain Current - Pulsed: 32A; (5)VGSS Gate-Source Voltage: ±30V; (6)EAS Single Pulsed Avalanche Energy: 850mJ; (7)IAR Avalanche Current: 8A; (8)EAR Repetitive Avalanche Energy: 17.8mJ; (9)dv/dt Peak Diode Recovery dv/dt: 4.5V/ns; (10)PD Power Dissipation (TC = 25℃): 59W; (11)Derate above 25℃: 0.48 W/℃; (12)TJ, TSTG Operating and Storage Temperature Range: -55℃ to +150℃; (13)TL Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds: 300℃.
Features
FQPF8N80C features: (1)8A, 800V, RDS (on) = 1.55Ω @ VGS = 10V; (2) Low gate charge (typical 35nC); (3) Low Crss ( typical 13pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)RoHS Compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FQPF8N80C |
Fairchild Semiconductor |
MOSFET 800V N-Ch Q-FET advance C-Series |
Data Sheet |
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FQPF8N80CXDTU |
Fairchild Semiconductor |
MOSFET 800V N-Ch Q-FET advance C-Series |
Data Sheet |
Negotiable |
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FQPF8N80CYDTU |
Fairchild Semiconductor |
MOSFET HIGH_VOLTAGE |
Data Sheet |
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