(Singapore)
Product Summary
The 2SD667A is a Silicon PNP Epitaxial. The applications of the 2SB667A include Low frequency power amplifier, Complementary pair with 2SD647/A.
Parametrics
2SB667A absolute maximum ratings: (1)Collector to base voltage VCBO: 120V; (2)Collector to emitter voltage VCEO:100V; (3)Emitter to base voltage VEBO: 5V; (4)Collector current IC: 1A; (5)Collector peak current iC (peak): 2A; (6)Collector power dissipation PC: 0.9W; (7)Junction temperature Tj: 150℃; (8)Storage temperature Tstg:-55℃ to +150℃.
Features
2SB667A features: (1) Collector to base breakdown voltage: 120V; (2) Collector to emitter breakdown voltage: 100V; (3) Emitter to base breakdown voltage: 5V; (4) Collector cutoff current: 10μA; (5) DC current transfer ratio: 60 to 200; (6) Collector to emitter saturation voltage: 1V; (7) Base to emitter voltage: 1.5V; (8) Gain bandwidth product: 140MHz; (9) Collector output capacitance: 12pF.
Diagrams
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 2SD667A |
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Data Sheet |
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| Image | Part No | Mfg | Description | |
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2SD667A |
Other |
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Data Sheet |
Negotiable |
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2SD669 |
Other |
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Data Sheet |
Negotiable |
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2SD669A |
Other |
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Data Sheet |
Negotiable |
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2SD669AL |
Other |
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Data Sheet |
Negotiable |
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2SD686 |
Other |
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Data Sheet |
Negotiable |
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2SD692 |
Other |
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Data Sheet |
Negotiable |
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