(Singapore)
Product Summary
The 2SK537 is a TOSHIBA field effect transistor.
Parametrics
2SK537 absolute maximum ratings: (1)Drain to source voltage VDSX: 900V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: 1A; (4)Drain peak current ID(pulse): 3A; (5)Drain Power dissipation PD: 60W; (6)Channel temperature Tch: 150℃; (7)Storage temperature Tstg: -55℃ to +150℃.
Features
2SK537 features: (1) High Breakdown Voltage: V (BR) DSS=900V; (2) High Forward Transfer Admittance: Yfs=0.4s (typ.); (3) Low Leakage current: IGSS=±100nA (Max.) @VGS=±20V, IDSS=300μA (Max.) @VDS=900V; (4) Enhancement-Mode: Vth=1.5V to 3.5V @ID=1mA.
Diagrams
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 2SK545-11D-TB-E |
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MOSFET J-FET N-CH CP |
Data Sheet |
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2SK546 |
Other |
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Data Sheet |
Negotiable |
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2SK583 |
Other |
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Data Sheet |
Negotiable |
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2SK596 |
Other |
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Data Sheet |
Negotiable |
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2SK596S-B |
ON Semiconductor |
JFET NCH J-FET |
Data Sheet |
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2SK544 |
Other |
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Data Sheet |
Negotiable |
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