(Singapore)
Product Summary
The BUR52 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, indented for use in switching and linear applications in military and industrial equipment. The BUR52 is used in linear and switching industrial equipment.
Parametrics
BUR52 absolute maximum ratings: (1)VCBO Collector-Base Voltage (IE = 0): 350 V; (2)VCEO Collector-Emitter Voltage (IB = 0): 250 V; (3)VEBO Emitter-Base Voltage (IC = 0): 10 V; (4)IC Collector Current: 60 A; (5)ICM Collector Peak Current (tp = 10 ms): 80 A; (6)IB Base Current: 16 A; (7)Ptot Total Dissipation at Tc ≤ 25 ℃: 350 W; (8)Tstg Storage Temperature: -65 to 200 ℃; (9)Tj Max. Operating Junction Temperature: 200 ℃.
Features
BUR52 features: (1) SGS-Thomson preferred salestype; (2) NPN transistor; (3) maintains good switching performance even without negative base drive.
Diagrams
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 BUR52 |
STMicroelectronics |
Transistors Bipolar (BJT) DISC BY STM 08/01 TO-3 NPN PWR DARL |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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BUR50 |
Other |
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Data Sheet |
Negotiable |
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BUR51 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN High Current |
Data Sheet |
Negotiable |
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BUR52 |
STMicroelectronics |
Transistors Bipolar (BJT) DISC BY STM 08/01 TO-3 NPN PWR DARL |
Data Sheet |
Negotiable |
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