Product Summary
The BPW34S is a 32V Silicon PIN Photodiode. The applications of it are Photointerrupters, IR remote controls, Industrial electronics, for control and drive circuits.
Parametrics
BPW34S absolute maximum ratings: (1)Operating and storage temperature range:-40℃ to +100℃; (2)Reverse voltage: 32V; (3) Total power dissipation: 150mW.
Features
BPW34S features: (1)Especially suitable for applications from 400 nm to 1100 nm; (2)Short switching time (typ. 20 ns) ; (3)DIL plastic package with high packing density; (4)BPW 34 S/(E9087): suitable for vapor-phase and IR-reflow soldering (JEDEC level 4).
Diagrams
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![]() BPW34S |
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![]() PHOTODIODE 850NM SMD |
![]() Data Sheet |
![]() Negotiable |
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Image | Part No | Mfg | Description | ![]() |
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![]() BPW33 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() BPW34B |
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![]() PHOTODIODE 850NM THRU-HOLE 620MA |
![]() Data Sheet |
![]() Negotiable |
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![]() BPW34FAS(E9087) |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() BPW34FS |
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![]() PHOTODIODE 950NM W/FILTER SMD |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() BPW34S |
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![]() PHOTODIODE 850NM SMD |
![]() Data Sheet |
![]() Negotiable |
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![]() BPW36 |
![]() Fairchild Semiconductor |
![]() Photodetector Transistors 6mA IR PHOTO TRAN |
![]() Data Sheet |
![]() Negotiable |
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