Product Summary

The 2SK3568 is a TOSHIBA Field Effect Transistor.

Parametrics

2SK3568 absolute maximum ratings: (1)Drain-source voltage VDSS: 500V; (2)Drain-gate voltage (RGS = 20kΩ) VDGR: 500V; (3)Gate-source voltage VGSS: ±30V; (4)DC ID: 12A; (5)Drain current Pulse (t = 1ms) IDP: 48A; (6)Drain power dissipation (Tc = 25℃) PD: 40W; (7)Single pulse avalanche energy; (8)(Note 2) EAS: 364mJ; (9)Avalanche current IAR: 1A; (10)Repetitive avalanche energy EAR: 4mJ; (11)Channel temperature Tch: 150℃; (12)Storage temperature range Tstg: -55℃ to 150℃.

Features

2SK3568 features: (1) Low drain-source ON-resistance: RDS (ON) = 0.4Ω (typ.); (2)High forward transfer admittance: |Yfs| = 8.5S (typ.); (3)Low leakage current: IDSS = 100μA (VDS = 500V); (4)Enhancement mode: Vth = 2.0V to 4.0V (VDS = 10V, ID = 1mA).

Diagrams

2SK3568 dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SK3568
2SK3568


MOSFET N-CH 500V 12A TO-220SIS

Data Sheet

Negotiable 
2SK3568(Q)
2SK3568(Q)

Toshiba

MOSFET N-Ch 500V 12A Rdson 0.52 Ohm

Data Sheet

Negotiable 
2SK3568(Q,M)
2SK3568(Q,M)


MOSFET N-CH 500V 12A TO-220SIS

Data Sheet

Negotiable