(Singapore)
Product Summary
The 2SK3568 is a TOSHIBA Field Effect Transistor.
Parametrics
2SK3568 absolute maximum ratings: (1)Drain-source voltage VDSS: 500V; (2)Drain-gate voltage (RGS = 20kΩ) VDGR: 500V; (3)Gate-source voltage VGSS: ±30V; (4)DC ID: 12A; (5)Drain current Pulse (t = 1ms) IDP: 48A; (6)Drain power dissipation (Tc = 25℃) PD: 40W; (7)Single pulse avalanche energy; (8)(Note 2) EAS: 364mJ; (9)Avalanche current IAR: 1A; (10)Repetitive avalanche energy EAR: 4mJ; (11)Channel temperature Tch: 150℃; (12)Storage temperature range Tstg: -55℃ to 150℃.
Features
2SK3568 features: (1) Low drain-source ON-resistance: RDS (ON) = 0.4Ω (typ.); (2)High forward transfer admittance: |Yfs| = 8.5S (typ.); (3)Low leakage current: IDSS = 100μA (VDS = 500V); (4)Enhancement mode: Vth = 2.0V to 4.0V (VDS = 10V, ID = 1mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SK3568 |
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MOSFET N-CH 500V 12A TO-220SIS |
Data Sheet |
Negotiable |
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 |
2SK3568(Q) |
Toshiba |
MOSFET N-Ch 500V 12A Rdson 0.52 Ohm |
Data Sheet |
Negotiable |
|
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|
2SK3568(Q,M) |
|
MOSFET N-CH 500V 12A TO-220SIS |
Data Sheet |
Negotiable |
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