(Singapore)
Product Summary
The 2SB647A is a Silicon PNP Epitaxial. The applications of the 2SB647A include Low frequency power amplifier, Complementary pair with 2SD667/A.
Parametrics
2SB647A absolute maximum ratings: (1)Collector to base voltage VCBO:–120V; (2)Collector to emitter voltage VCEO:–100V; (3)Emitter to base voltage VEBO:–5V; (4)Collector current IC:–1A; (5)Collector peak current iC (peak):–2A; (6)Collector power dissipation PC: 0.9W; (7)Junction temperature Tj: 150℃; (8)Storage temperature Tstg:–55℃ to +150℃.
Features
2SB647A features: (1)Collector to base breakdown voltage: -120V; (2)Collector to emitter breakdown voltage: -100V; (3)Emitter to base breakdown voltage: -5V; (4)Collector cutoff current: -10μA; (5)DC current transfer ratio: 60 to 200; (6)Collector to emitter saturation voltage: -1V; (7)Base to emitter voltage: -1.5V; (8)Gain bandwidth product: 140MHz; (9)Collector output capacitance: 20pF.
Diagrams
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 2SB647A |
Other |
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Data Sheet |
Negotiable |
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2SB647AC |
Other |
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Data Sheet |
Negotiable |
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