Product Summary
The 2N2369A is an NPN silicon switching transistor.
Parametrics
2N2369A absolute maximum ratings: (1)Collector-Emitter Voltage:15Vdc; (2)Emitter-Base Voltage:4.5Vdc; (3)Collector-Base Voltage:40Vdc; (4)Collector-Emitter Voltage:40Vdc; (5)Operating & Storage Junction Temperature Range:-65℃ to +200℃.
Features
2N2369A features: (1)Thermal Resistance, Junction-to-Case:146℃/mW; (2)Thermal Resistance, Ambient-to-Case:325℃/mW; (3)Collector-Emitter Breakdown Voltage, IC = 10mAdc: 15Vdc; (4) Collector-Emitter Cutoff Current, VCE = 20Vdc: 0.4μAdc; (5) Emitter-Base Breakdown Voltage, VEB = 4.5 Vdc: 10μAdc; (6) Emitter-Base Cutoff Current, VEB = 4.0 Vdc: 0.25μAdc; (7) Collector-Base Breakdown Voltage, VCB=40Vdc:10μAdc; (8) Collector-Base Cutoff Current, VCB = 32 Vdc: 0.2μAdc.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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2N2369A |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Fast SW SS |
Data Sheet |
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2N2369A1 |
Other |
Data Sheet |
Negotiable |
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2N2369ACSM |
Other |
Data Sheet |
Negotiable |
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2N2369ADCSM |
Other |
Data Sheet |
Negotiable |
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2N2369AU |
Other |
Data Sheet |
Negotiable |
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2N2369AUA |
Other |
Data Sheet |
Negotiable |
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2N2369AUB |
Other |
Data Sheet |
Negotiable |
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