(Singapore)
Product Summary
The IXTM11N80 is a MegaMOSFET. The applications of the IXTM11N80 include Switch-mode and resonant-mode power supplies, Motor controls, Uninterruptible Power Supplies (UPS), DC choppers.
Parametrics
IXTM11N80 absolute maximum ratings: (1)VDSS TJ = 25℃ to 150℃: 800V; (2)VDGR TJ = 25℃ to 150℃; RGS = 1MΩ: 800V; (3)VGS Continuous: ±20V; (4)VGSM Transient: ±30V; (5)ID25 TC = 25℃: 11A; (6)IDM TC = 25℃, pulse width limited by TJM: 44A; (7)PD TC = 25℃: 300W; (8)TJ: -55℃ to +150℃; (9)TJM: 150℃; (10)Tstg: -55℃ to +150℃.
Features
IXTM11N80 features: (1)International standard packages; (2)Low RDS (on) HDMOS process; (3)Rugged polysilicon gate cell structure; (4)Low package inductance (＜5nH): Easy to drive and to protect; (5) Fast switching times.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IXTM11N80 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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IXTM10N100 |
Other |
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Data Sheet |
Negotiable |
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IXTM11N80 |
Other |
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Data Sheet |
Negotiable |
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IXTM12N100 |
Other |
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Data Sheet |
Negotiable |
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IXTM12N50A |
Other |
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Data Sheet |
Negotiable |
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IXTM12N90 |
Ixys |
MOSFET 12 Amps 900V 0.9 Ohms Rds |
Data Sheet |
Negotiable |
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IXTM13N80 |
Other |
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Data Sheet |
Negotiable |
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