(Singapore)
Product Summary
The 2SA1207 is a PNP/NPN Epitaxial Planar Silicon Transistor.
Parametrics
2SA1207 absolute maximum ratings: (1)Collector-base voltage VCBO: -180 V; (2)Collector-emitter voltage VCEO: -160 V; (3)Emitter-base voltage VEBO: -5 V; (4)Collector current IC: -70mA; (5)Collector current (pulse): -140mA; (6)Collector power dissipation PC: 600mW; (7)Junction temperature Tj: 150 ℃; (8)Storage temperature range Tstg: -55℃ to 150℃.
Features
2SA1207 features: (1) Adoption of FBET process; (2) High breakdown voltage; (3) Excellent linearity of hFE and small cob; (4) Fast switching speed.
Diagrams
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 2SA1207 |
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Data Sheet |
Negotiable |
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2SA1006 |
Other |
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2SA1006A |
Other |
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2SA1006B |
Other |
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Data Sheet |
Negotiable |
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2SA1008 |
Other |
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Data Sheet |
Negotiable |
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2SA1009 |
Other |
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Data Sheet |
Negotiable |
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2SA1009A |
Other |
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Data Sheet |
Negotiable |
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