(Singapore)
Product Summary
The NEZ1414-2E is a power GaAs MESFET which provides high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 W external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The NEZ1414-2E incorporates a WSi (tungsten silicide) gate structure for high reliability.
Parametrics
NEZ1414-2E absolute maximum ratings: (1)Drain to Source Voltage VDS: 15V; (2)Gate to Source Voltage VGS: -7V; (3)Drain Current IDS: 2.5A; (4)Gate Forward Current IGF: +20mA; (5)Gate Reverse Current IGR: –20mA; (6)Total Power Dissipation PT: 15W; (7)Channel Temperature Tch: 175℃; (8)Storage Temperature Tstg:–65℃ to +175℃.
Features
NEZ1414-2E features: (1) High Output Power: Po (1 dB) = +34.0dBm typ.; (2) High Linear Gain: 7.5dB typ.; (3) High Efficiency: 30 % typ.; (4) Input and Output Internally Matched for Optimum performance.
Diagrams
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NEZ1011-2E |
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NEZ1011-8E |
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NEZ1414-2E |
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Negotiable |
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NEZ1414-8E |
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