(Singapore)
Product Summary
The MJ4502 is a high power PNP silicon transistor.
Parametrics
MJ4502 absolute maximum ratings: (1)Collector-base voltage VCBO: 100 V; (2)Collector-emitter voltage VCEO: 90 V; (3)Emitter-base voltage VEBO: 4V; (4)Collector current IC: 30A; (5)Base current IB: 7.5A; (6)Total Device dissipation @ TC=25℃ : 200W; (7)Operating and Storage Junction temperature range Tstg: -65℃ to 200℃.
Features
MJ4502 features: (1) High DC Current Gain: hFE = 25 to 100 @ IC = 7.5A; (2) Excellent Safe Operating Area; (3) Complement to the NPN MJ802.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 MJ4502G |
ON Semiconductor |
Transistors Bipolar (BJT) 30A 100V 200W PNP |
Data Sheet |
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MJ4502 |
ON Semiconductor |
Transistors Bipolar (BJT) 30A 100V 200W PNP |
Data Sheet |
Negotiable |
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